Welding Diodes 5SDD, 5SDF ABB Replacement
Welding diodes in disc design are available in medium frequency (up to 2 kHz) and high frequency (up to 10 kHz). They all feature very low on-state voltage (VRRM of 200-400V), low static losses and very low thermal resistance.
Welding Diodes ADD, ADF AS ENERGITM are a replacement, analog, alternative semiconductor devices for Welding Diodes 5SDD, 5SDF Hitachi ABB Power Grids'.
Part numbering guide for welding diodes
Welding diodes are available in light package, thin and hermetically sealed ceramic housings. Industry standard design housing enables easy installation into existing equipment.
"Air-cooled heatsinks O series for disc devices", "Air heatsink SF series", "Water heatsink SS series" for diode cooling are also available to order.
Series of welding diodes has the following features: ability to conduct high mean forward current, allowing to reduce the amount of parallel devices; high resistance to electric and thermal cycling ensures a long service life; minimal static losses; high maximal junction temperature (Tjmax) allows these diodes to conduct higher current with the same cooling system; possibility of double-sided cooling; optimized for high current rectifiers; very low thermal resistance; designed for medium and high frequency welding equipment.
Rectifier Diodes AS ENERGITM have the following features: low static and dynamic losses, high values of VRSM/VRRM, extensive experience of using the devices in various industries, range of voltages from 100 to 9000 V and amperages from 100 to 7500 A, high resistance to thermal and electric cycling.
Our company provides a quality guarantee for rectifier diodes of 2 years from the date of purchase. When supplying diodes, if necessary, we provide technical passport and certificate of conformity.
The final price of welding diodes depends on the voltage class, quantity, delivery terms, manufacturer, country of origin and form of payment.
General specifications of Welding Diodes 5SDD ABB and Replacements
Medium frequency (up to 2 kHz)
Type | IF(AV)M (TC=85°C) |
VRRM | VFMAX | IFSM | VF0 | rF | Tvj max | Rth (j-c) |
Rth (c-h) |
Fm ±10% |
Package | Replacement AS ENERGITM |
Data sheet |
A | V | V | kA | V | mΩ | ºC | K/kW | K/kW | kN | ||||
5SDD 71X0200 | 7110 | 200 | 1.05* | 55 | 0.74 | 0.026 | 170 | 10.0 | 5.0 | 22 | X | ADD 7100-02-X-00 | |
5SDD 71B0200 | 7110 | 200 | 1.05* | 55 | 0.74 | 0.026 | 170 | 10.0 | 5.0 | 22 | B | ADD 7100-02-B-00 | |
5SDD 71X0400 | 7110 | 400 | 1.00* | 55 | 0.74 | 0.026 | 170 | 10.0 | 5.0 | 22 | X | ADD 7100-04-X-00 | |
5SDD 71B0400 | 7110 | 400 | 1.05* | 55 | 0.74 | 0.026 | 170 | 10.0 | 5.0 | 22 | B | ADD 7100-04-B-00 | |
5SDD 92Z0401 | 9244 | 400 | 1.03** | 60 | 0.78 | 0.031 | 180 | 5.6 | 3.6 | 36 | Z1 | ADD 9200-04-Z-01 | |
5SDD 0105Z0401 | 10502 | 400 | 1.01** | 70 | 0.812 | 0.026 | 180 | 5.0 | 2.5 | 40 | Z2 | ADD 10500-04-Z-01 | |
5SDD 0120C0200 | 11000 | 200 | 0.92** | 85 | 0.75 | 0.020 | 170 | 6.0 | 3.0 | 37.5 | C | ADD 12000-02-C-00 | |
5SDD 0120C0400 | 11350 | 400 | 0.88** | 85 | 0.74 | 0.018 | 170 | 6.0 | 3.0 | 37.5 | C | ADD 12000-04-C-00 | |
5SDD 0135Z0401 | 13526 | 400 | 0.92** | 85 | 0.758 | 0.021 | 180 | 3.9 | 2.6 | 52.5 | Z3 | ADD 13500-04-Z-01 |
* – at IF=5000A, Tj=25°C ** – at IF=8000A, Tvj max |
Drawings and housings dimensions for Welding Diodes: |
General specifications of Welding Diodes 5SDF ABB and Replacements
High frequency (up to 10 kHz)
Type | IF(AV)M (TC=85°C) |
VRRM | VFMAX | IFSM | VF0 | rF | Qrr | Tvj max | Rth (j-c) |
Rth (c-h) |
Fm ±10% |
Package | Replacement AS ENERGITM |
Data sheet |
A | V | V | kA | V | mΩ | μC | ºC | K/kW | K/kW | kN | ||||
5SDF 63B0400 | 6266 | 400 | 1.14* | 44 | 0.962 | 0.036 | 180 | 190 | 10.0 | 5.0 | 22 | B | ADF 6300-04-B-00 | |
5SDF 63X0400 | 6266 | 400 | 1.14* | 44 | 0.962 | 0.036 | 180 | 190 | 10.0 | 5.0 | 22 | X | ADF 6300-04-X-00 | |
5SDF 90Z0401 | 9041 | 400 | 1.13* | 48 | 0.979 | 0.032 | 200 | 190 | 5.6 | 3.6 | 36.0 | Z1 | ADF 9000-04-Z-01 | |
5SDF 0102C0400 | 10159 | 400 | 1.14** | 70 | 0.977 | 0.022 | 300 | 190 | 6.0 | 3.0 | 37.5 | C | ADF 10200-04-C-00 | |
5SDF 0103Z0401 | 10266 | 400 | 1.20** | 54 | 0.998 | 0.027 | 230 | 190 | 5.0 | 2.5 | 40.0 | Z2 | ADF 10300-04-Z-01 | |
5SDF 0131Z0401 | 13058 | 400 | 1.14** | 70 | 0.977 | 0.022 | 300 | 190 | 3.9 | 2.6 | 52.5 | Z3 | ADF 13100-04-Z-01 |
* – at IF=5000A, Tvj max ** – at IF=8000A, Tvj max |
Drawings and housings dimensions for Welding Diodes: |
Package type | Dimensions ØDxØdxH | Weight |
B | 63x44.4x8 mm | 0.14 kg |
C | 75.5x57x8 mm | 0.22 kg |
X | 61x44.4x8 mm | 0.14 kg |
Z1 | 53x47x5 mm | 0.10 kg |
Z2 | 56x49.5x5 mm | 0.11 kg |
Z3 | 63.5x57x5 mm | 0.14 kg |
Part Numbering Guide for Welding Diodes:
A | DF | 6300 | – | 04 | – | B | – | 00 |
A | – | AS ENERGITM |
DF | – | Product group: Diode, High Frequency. |
6300 | – | Average on-state current IF(AV), Amp. |
04 | – | Voltage class VRRM / 100. |
B | – | Housing (package) type. |
00 | – | Version number. |
High Power Semiconductors AS ENERGITM
Our company is engaged in the manufacturer and sale of wide range of power semiconductors (power thyristors, modules, rectifier diodes, avalanche, rotor and welding diodes, triacs etc.) currents up to 15000A and voltages to 9000V, and air and water heatsinks to them.
You can buy semiconductor devices in any volumes, and when ordering large lots, the price will be lower. We have earned the trust of customers and supply products all over the world.
For questions regarding the acquisition of Power Thyristors, Diodes, Modules send an email request to:
And we will provide you a commercial offer for delivery.
For a large number, we will provide an individual price!!!
We are open to manufacture products at our production facilities
according to your requests and technical task.
Photo Gallery
The photo gallery shows many different semiconductor devices, semiconductor chips and SCRs produced by AS ENERGITM, examples of test reports.
Installation recommendations for disc type power rectifier diodes:
The reliability of heat transfer and electrical contact between the mating surfaces of the diode and the cooler over the entire temperature range is ensured by appropriate torque (clamping force).
Before assembly you should perform visual inspection (1) contact surfaces for mechanical damages and wipe (2), soaked with alcohol (toluene, gasoline, acetone).
After inspection, fix the current contacts (leads), install a pin to fix the alignment of the structure.
To improve the parameters of heat transfer it is recommended to lubricate (3) a thin layer of silicone thermal conductive paste before the assembly, which is not a mandatory condition for installation.
Install the diode (3), the second part of the cooler, the fiberglass insulator and the thrust washer.
To thread the traverse (4) and evenly tighten the nuts. Make sure no misalignment and evenness of the contact surfaces.
When the parts are sufficiently clamped but moveable, we recommend placing the cooler on a flat surface and checking the tolerance for parallelism of the overall adjacent plane of the surfaces (5).
Clamp each nut in turn (about a quarter turn) to the stop (6). The amount of deflection of the traverse determines whether the achieved clamping force corresponds to the required one.
After installation, the fasteners (nuts and washers) must be additionally secured against corrosion.
Tips and recommendations for power diodes:
The power diodes should not be operated for long periods of time at their limit load for all parameters. In this case, the safety factor is determined by the required degree of reliability of the device.
Replace a failed power diode with a diode that matches the parameters of the one being replaced.
Supercooling must be provided when operating in an environment with an elevated ambient temperature.
Periodic cleaning of power diodes and coolers to remove dust and contaminants is recommended to ensure proper heat dissipation.
Inductive current dividers (often twisted toroidal wire) should be used to equalize currents between power diodes connected in parallel. The most popular connection methods are closed circuit, common coil circuit, or power diode. The efficiency of current dividers in this case is determined by the cross section of the magnetic wire.
Prevention of voltage unbalance when power diodes are connected in series is achieved by using shunt resistors connected in parallel with each diode. Voltage equalization in transient conditions is provided by connecting capacitors in parallel to each diode.
It is strictly forbidden to touch power diodes under high voltage during operation.
Why choose AS ENERGITM
- Own production facilities, including semiconductor silicon chips production
- European brand - 100% quality, favorable price, short production terms
- Over 20 years of experience in the semiconductor industry
- Clients from more than 50 countries trust us
- 20000 items in the product line for currents from 10A to 15000A, voltages from 100V to 9000V
- We produce analogues of other manufacturers' products
- Guaranteed certified quality, warranty period of operation - 2 years
Quality Warranty
Our products are certified and correspond to international standards.
Our company provides a quality guarantee for products of 2 years.
We provide certificates of conformity, reliability reports, data sheets and technical passports at the request of the customer.
Each product is tested for the main parameters, and Test reports of the parameters for each product are provided.
Geography of partnership
AS ENERGITM company manufactures and supplies power semiconductors to more than 50 countries around the world.
Logistics and Delivery
We deliver our products all over the world with the services of logistics companies: DHL, TNT, UPS, EMS, Fedex, Aramex.
Products can be delivered by any means of transport: air, sea, rail and road.
AS ENERGITM Semiconductors Manufacturing
Our products range includes rectifier diodes, phase control thyristors in disc and stud design, avalanche diodes and thyristors, fast switching, high frequency thyristors, fast recovery, welding and rotor diodes, triacs, bridge rectifiers, power modules (thyristor, diode, thyristor-diode, IGBT), and air and water heatsinks to them.
Power diodes and thyristors are produced for currents from 10A to 15000A, voltage range from 100V to 9000V.
Power diode and thyristor modules are produced from 25A and up to 1250A, voltage range 400V - 4400V.
The range of power semiconductors also includes equivalent, replacement, analogue and alternative semiconductor devices of global manufacturers.
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