Power Phase Control Thyristors SCR 100A – 400A, Stud Package

Power Phase Control Thyristors AS ENERGI^TM, also known as Silicon Controlled Rectifier (SCR), stud version are general-purpose thyristors, regulating and converting DC and AC currents to 400A at frequencies to 500 Hz in circuits with voltages to 4400V (depending on series).

Power stud thyristors series T have the following types (current): 100 A, 125 A, 160 A, 200 A, 250 A, 320 A, 400 Ampere.

Series of high-power stud thyristors

Part numbering guide for power stud thyristors

Technical passport for power stud thyristors

Installation recommendations for power thyristors

Video: Reviews of high power thyristors and diodes

The thyristor has an industry-standard ceramic housing making it easy to integrate the device into existing equipment.

The polarity of the thyristor is determined by the icon on the case. The base of the thyristor is the Anode, the flexible power lead is the Cathode, the flexible wire exiting the base of the power lead is the auxiliary cathode, the flexible wire exiting the case is the control electrode (Gate). The technical specifications, part numbering guide, polarity, dimensions and recommended coolers for thyristors are listed below.

Air and water heat sinks are used to cool the thyristors. To provide reliable thermal and electrical contact with the heatsink a tightening torque M_d must be observed during assembly. For better heat dissipation of thyristor during assembly, heat conducting paste is used.

The thyristors have a sealed housing isolating the functional part and the semiconductor element from mechanical impacts and environment. This thyristor has a stud design with a flexible power lead. Stud thyristors are notable for their ability to be used on moving parts.

Thyristors from AS Energi Global LLC have the following features: low static and dynamic losses, high values of V_DRM/V_RRM, extensive experience of using the devices in various industries, range of voltages from 100 to 9000 V and amperages from 100 to 15000 A, high resistance to thermal and electric cycling, natural or forced air cooling.

Our company provides a quality guarantee for thyristors of 2 years from the date of purchase. When supplying thyristors, if necessary, we provide technical passport and certificate of conformity.

The final price of phase control stud thyristors depends on the voltage class, quantity, delivery terms, manufacturer, country of origin and form of payment.

For questions regarding the acquisition of High Power Thyristors, Diodes send an email request to:

[email protected]

And we will provide you a commercial offer for delivery.
For a large number, we will provide an individual price!!!

We are open to manufacture products at our production facilities
according to your requests and technical task.

Photo Gallery

The photo gallery shows many different semiconductor devices, semiconductor chips and SCRs produced by AS ENERGI^TM, examples of test reports.

See more Photos

High Power Stud Thyristor Series:

T151

T161, T261, T361

T171, T271, T371, T471

Power Thyristors T151 (100A)

Thyristors T151

Series	Price	Voltage V_DRM, V_RRM	Average forward current I_T(AV) (T_C, ºC)	Voltage code V_RRM / 100	Weight	Package type	Heatsink	Data sheet
T151-100	on request + –	300 - 1800V	100A (90ºC)	3 - 18	150 g	ST5	O151

Detailed specifications of Power Thyristors T151

A(°C)

°C

V/A

mΩ

V/µs

A/µs

µs

kA²·s

°C/W

T151-100

300-1800

100(90)

157

2.0

140

1.80/314

1.15

2.40

20-1000

200

2.5

160

250

0.30

Power Thyristors T161 (125A – 200A)

Thyristors T161

Series	Price	Voltage V_DRM, V_RRM	Average forward current I_T(AV) (T_C, ºC)	Voltage code V_RRM / 100	Weight	Package type	Heatsink	Data sheet
T161-125	on request + –	100 - 1800V	125A (101ºC) 183A (85ºC)	1 - 18	240 g	ST6	O171, O271, O371, O471, OM101
T161-160	on request + –	300 - 1800V	160A (87ºC)	3 - 18	240 g	ST6	O171, O271, O371, O471, OM101
T161-200	on request + –	300 - 1600V	200A (87ºC)	3 - 16	240 g	ST6	O171, O271, O371, O471, OM101

Detailed specifications of Power Thyristors T161

Series	V_DRM V_RRM	I_T(AV) (T_C)	I_TRMS	I_TSM	T_jmax	V_TM/ I_TM	V_T(TO)	r_T	I_DRM I_RRM	(dV_D/dt)_cr	I_GT	V_GT	(di_T/dt)_cr	t_q	i²·t	R_th(j-c)
Series	V	A(°C)	A	kA	°C	V/A	V	mΩ	mA	V/µs	mA	V	A/µs	µs	kA²·s	°C/W
T161-125	100-1800	125(101) 183(85)	196	4.0	125	1.45/393	0.867	1.300	50	200-1000	250	2.5	800	125-500	60	0.15
T161-160	300-1800	160(87)	251	4.0	125	1.70/502	1.05	1.36	15	20-1000	200	2.5	125	250	80	0.15
T161-200	300-1600	200(87)	314	5.0	125	1.60/628	1.00	1.05	15	20-1000	200	2.5	160	250	125	0.13

Power Thyristors T261, T361 (160A)

Thyristors T261, T361

Series	Price	Voltage V_DRM, V_RRM	Average forward current I_T(AV) (T_C, ºC)	Voltage code V_RRM / 100	Weight	Package type	Heatsink	Data sheet
T261-160	on request + –	100 - 1800V	160A (92ºC) 186A (85ºC)	1 - 18	240 g	ST6	O171, O271, O371, O471, OM101
T361-160	on request + –	2400 - 2600V	160A (80ºC)	24 - 26	240 g	ST6	O171, O271, O371, O471, OM101

Detailed specifications of Power Thyristors T261, T361

Series	V_DRM V_RRM	I_T(AV) (T_C)	I_TRMS	I_TSM	T_jmax	V_TM/ I_TM	V_T(TO)	r_T	I_DRM I_RRM	(dV_D/dt)_cr	I_GT	V_GT	(di_T/dt)_cr	t_q	i²·t	R_th(j-c)
Series	V	A(°C)	A	kA	°C	V/A	V	mΩ	mA	V/µs	mA	V	A/µs	µs	kA²·s	°C/W
T261-160	100-1800	160(92) 186(85)	251	4.5	125	1.55/502	0.850	1.278	50	200-1000	250	2.5	800	125-500	80	0.150
T361-160	2400-2600	160(80)	251	3.5	125	2.00/502	1.415	1.290	20	500-1000	250	2.5	125	250	61	0.145

Power Thyristors T171 (200A – 320A)

Thyristors T171

Series	Price	Voltage V_DRM, V_RRM	Average forward current I_T(AV) (T_C, ºC)	Voltage code V_RRM / 100	Weight	Package type	Heatsink	Data sheet
T171-200	on request + –	100 - 1800V	200A (102ºC) 310A (85ºC)	1 - 18	440 g	ST7	O181, O281, OM105
T171-250	on request + –	100 - 1800V	250A (94ºC) 307A (85ºC)	1 - 18	440 g	ST7	O181, O281, OM105
T171-320	on request + –	300 - 1800V	320A (87ºC)	3 - 18	440 g	ST7	O181, O281, OM105

Detailed specifications of Power Thyristors T171

Series	V_DRM V_RRM	I_T(AV) (T_C)	I_TRMS	I_TSM	T_jmax	V_TM/ I_TM	V_T(TO)	r_T	I_DRM I_RRM	(dV_D/dt)_cr	I_GT	V_GT	(di_T/dt)_cr	t_q	i²·t	R_th(j-c)
Series	V	A(°C)	A	kA	°C	V/A	V	mΩ	mA	V/µs	mA	V	A/µs	µs	kA²·s	°C/W
T171-200	100-1800	200(90) 310(85)	314	6.0	125	1.45/628	1.027	0.641	70	200-1000	250	2.5	1000	125-500	170	0.085
T171-250	100-1800	250(94) 310(85)	393	6.5	125	1.55/785	1.036	0.653	70	200-1000	250	2.5	1000	125-500	200	0.085
T171-320	300-1800	320(87)	502	8.5	125	1.60/1004	1.050	0.530	30	20-1000	200	2.5	125	250	361	0.085

Power Thyristors T271 (250A – 400A)

Thyristors T271

Series	Price	Voltage V_DRM, V_RRM	Average forward current I_T(AV) (T_C, ºC)	Voltage code V_RRM / 100	Weight	Package type	Heatsink	Data sheet
T271-250	on request + –	100 - 800V	250A (123ºC) 409A (100ºC)	1 - 8	440 g	ST7 (T.SB1)	O181, O281, OM105
T271-320	on request + –	100 - 800V	320A (116ºC) 429A (100ºC)	1 - 8	440 g	ST7 (T.SB1)	O181, O281, OM105
T271-400	on request + –	100 - 800V	400A (105ºC)	1 - 8	440 g	ST7	O181, O281, OM105

Detailed specifications of Power Thyristors T271

Series	V_DRM V_RRM	I_T(AV) (T_C)	I_TRMS	I_TSM	T_jmax	V_TM/ I_TM	V_T(TO)	r_T	I_DRM I_RRM	(dV_D/dt)_cr	I_GT	V_GT	(di_T/dt)_cr	t_q	i²·t	R_th(j-c)
Series	V	A(°C)	A	kA	°C	V/A	V	mΩ	mA	V/µs	mA	V	A/µs	µs	kA²·s	°C/W
T271-250	100-800	250(123) 409(100)	393	10.0	150	1.35/785	0.906	0.531	70	200-1000	250	2.5	800	125-500	450	0.085
T271-320	100-800	320(116) 429(100)	502	10.5	150	1.35/1005	0.871	0.472	70	200-1000	250	2.5	800	125-500	500	0.085
T271-400	100-800	400(105)	627	11.5	150	1.35/1256	0.800	0.450	30	200-1000	250	2.5	320	160	620	0.090

Power Thyristors T371 (200A – 320A)

Thyristors T371


Series	Price	Voltage V_DRM, V_RRM	Average forward current I_T(AV) (T_C, ºC)	Voltage code V_RRM / 100	Weight	Package type	Heatsink	Data sheet
T371-200	on request + –	100 - 1800V	200A (102ºC) 310A (85ºC)	1 - 18	470 g	T.SB2	O181, O281, OM105
T371-250	on request + –	2200 - 2600V	250A (94ºC)	22 - 26	440 g	ST7 (T.SB2)	O181, O281, OM105
T371-320	on request + –	2000 - 2200V	320A (82ºC)	20 - 22	440 g	ST7 (T.SB2)	O181, O281, OM105

Detailed specifications of Power Thyristors T371

Series	V_DRM V_RRM	I_T(AV) (T_C)	I_TRMS	I_TSM	T_jmax	V_TM/ I_TM	V_T(TO)	r_T	I_DRM I_RRM	(dV_D/dt)_cr	I_GT	V_GT	(di_T/dt)_cr	t_q	i²·t	R_th(j-c)
Series	V	A(°C)	A	kA	°C	V/A	V	mΩ	mA	V/µs	mA	V	A/µs	µs	kA²·s	°C/W
T371-200	100-1800	200(102) 310(85)	314	6.0	125	1.45/628	1.027	0.641	70	200-1000	250	2.5	1000	125-500	170	0.085
T371-250	2200-2600	250(94)	392	7.0	125	1.54/785	0.930	0.730	30	200-1000	200	2.5	250	250	180	0.090
T371-320	2000-2200	320(82)	502	8.0	125	1.67/1004	1.050	0.680	30	200-1000	200	2.5	320	200	320	0.085

Power Thyristors T471 (200A – 320A)

Thyristors T471


Series	Price	Voltage V_DRM, V_RRM	Average forward current I_T(AV) (T_C, ºC)	Voltage code V_RRM / 100	Weight	Package type	Heatsink	Data sheet
T471-200	on request + –	4000 - 4400V	200A (80ºC)	40 - 44	440 g	ST7	O181, O281, OM105
T471-250	on request + –	100 - 1800V	250A (94ºC) 307A (85ºC)	1 - 18	440 g	ST7 (T.SB2)	O181, O281, OM105
T471-320	on request + –	100 - 1800V	320A (84ºC)	1 - 18	440 g	ST7 (T.SB2)	O181, O281, OM105

Detailed specifications of Power Thyristors T471

Series	V_DRM V_RRM	I_T(AV) (T_C)	I_TRMS	I_TSM	T_jmax	V_TM/ I_TM	V_T(TO)	r_T	I_DRM I_RRM	(dV_D/dt)_cr	I_GT	V_GT	(di_T/dt)_cr	t_q	i²·t	R_th(j-c)
Series	V	A(°C)	A	kA	°C	V/A	V	mΩ	mA	V/µs	mA	V	A/µs	µs	kA²·s	°C/W
T471-200	4000-4400	200(80)	214	4.0	125	2.46/628	1.850	1.240	50	500-1000	200	2.5	200	320-400	80	0.090
T471-250	100-1800	250(94) 307(85)	393	6.5	125	1.55/785	1.036	0.653	70	200-1000	250	2.5	1000	125-500	210	0.085
T471-320	100-1800	320(84)	502	7.0	125	1.60/1005	1.006	0.612	70	200-1000	250	2.5	1000	125-500	230	0.085

Part Numbering Guide for High Power Stud Thyristors:

161

–

200

–

Thyristor,

AS ENERGI^TM

161

–

Thyristor type (stud type).

200

–

Average current in open state I_T(AV), Amp.

–

Voltage class V_RRM / 100 (Nominal voltage – 1600 V).

–

Parameter of the critical rate of rise of off-state voltage (dV_D/dt)_crit:

Alpha-numeric coding	P2	K2	Е2	A2	T1	P1	M1
Digital coding	4	5	6	7	8	–	9
Value, V/µs	200	320	500	1000	1600	2000	2500

–

Parameter of turn-off time t_q:

Alpha-numeric coding	0	B2	C2	E2	H2	K2	М2	P2	T2	X2	A3
Digital coding	0	–	–	1	–	–	2	–	3	–	4
Value, V/µs	not standardized	800	630	500	400	320	250	200	160	125	100

Note: Identification of dynamic parameter groups for Phase Control Thyristors (T)

Technical Passport for Power Stud Thyristors (sample):

When supplying thyristors, if necessary, we provide technical passport and certificate of conformity.

High Power Semiconductors AS ENERGI^TM

Our company is engaged in the manufacturer and sale of wide range of power semiconductors (power thyristors, modules, rectifier diodes, rotor and welding diodes, triacs etc.) currents up to 15000A and voltages to 9000V, and air and water heatsinks to them. You can buy semiconductors in any volumes, and when ordering large lots, the price will be lower.
We have earned the trust of customers and supply products all over the world.

To purchase High Power Thyristors, Diodes, Modules send an email request to:

[email protected]

And we will provide you a commercial offer for delivery.

Video: Diodes Stud Mounted Type

Video: Power Disc Thyristors 630A, 800A, 1000A

Video: Power Disc Thyristors 1600A, 2000A, 2500A

Video: Power Disc Thyristors 1000A, 1250A, 2000A, 3200A, 4000A, 5000A

Photo of High Power Stud Type Thyristors:

Installation recommendations for power stud mount thyristors:

Assembling stud thyristor with a heatsink

The reliability of heat transfer and electrical contact between the mating surfaces of the thyristor and the cooler over the entire temperature range is ensured by appropriate torque.

Before assembly you should perform visual inspection (1) contact surfaces for mechanical damages and wipe (2), soaked with alcohol (toluene, gasoline, acetone).

To improve the parameters of heat transfer it is recommended to lubricate (3) a thin layer of silicone thermal conductive paste before the assembly, which is not a mandatory condition for installation.

After installation, the fasteners (nuts and washers) must be additionally secured against corrosion.

Tips and recommendations for power thyristors:

The power thyristors should not be operated for long periods of time at their limit load for all parameters. In this case, the safety factor is determined by the required degree of reliability of the device.

Replace a failed power thyristor with a thyristor that matches the parameters of the one being replaced.

Supercooling must be provided when operating in an environment with an elevated ambient temperature.

Periodic cleaning of power thyristors and coolers to remove dust and contaminants is recommended to ensure proper heat dissipation.

Inductive current dividers (often twisted toroidal wire) should be used to equalize currents between power thyristors connected in parallel. The most popular connection methods are closed circuit, common coil circuit, or power thyristor. The efficiency of current dividers in this case is determined by the cross section of the magnetic wire.

Prevention of voltage unbalance when power thyristors are connected in series is achieved by using shunt resistors connected in parallel with each thyristor. Voltage equalization in transient conditions is provided by connecting capacitors in parallel to each thyristor.

It is strictly forbidden to touch power thyristors under high voltage during operation.

Why choose AS ENERGI^TM

Own production facilities, including semiconductor silicon chips production
European brand - 100% quality, favorable price, short production terms
Over 20 years of experience in the semiconductor industry
Clients from more than 50 countries trust us
20000 items in the product line for currents from 10A to 15000A, voltages from 100V to 9000V
We produce analogues of other manufacturers' products
Guaranteed certified quality, warranty period of operation - 2 years

Quality Warranty

Our products are certified and correspond to international standards.
Our company provides a quality guarantee for products of 2 years.
We provide certificates of conformity, reliability reports, data sheets and technical passports at the request of the customer.

Each product is tested for the main parameters, and Test reports of the parameters for each product are provided.

Geography of partnership

AS ENERGI^TM company manufactures and supplies power semiconductors to more than 50 countries around the world.

Logistics and Delivery

We deliver our products all over the world with the services of logistics companies: DHL, TNT, UPS, EMS, Fedex, Aramex.
Products can be delivered by any means of transport: air, sea, rail and road.

AS ENERGI^TM Semiconductors Manufacturing

Our products range includes rectifier diodes, phase control thyristors in disc and stud design, avalanche diodes and thyristors, fast switching, high frequency thyristors, fast recovery, welding and rotor diodes, triacs, bridge rectifiers, power modules (thyristor, diode, thyristor-diode, IGBT), and air and water heatsinks to them.

Power diodes and thyristors are produced for currents from 10A to 15000A, voltage range from 100V to 9000V.
Power diode and thyristor modules are produced from 25A and up to 1250A, voltage range 400V - 4400V.
The range of power semiconductors also includes equivalent, replacement, analogue and alternative semiconductor devices of global manufacturers.

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