Fast Switching Thyristor 5STF 06T1408 ABB Replacement

ABB Part Number 5STF06T1408
Average on-state current, IT(AV)M (TC) 568А (70ºC)
Voltage, VDRM/VRRM 1400 V
Dimensions ØDxØdxH 58.5x34x20 mm
Datasheet
Replacement AS ENERGITM ATF 600-14-T-08
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Fast Switching Thyristor ATF 600-14-T-08 AS ENERGITM is a replacement, analogue, alternative and equivalent semiconductor device for thyristor 5STF06T1408, 5STF 06T1408 ABB Power Grids, Hitachi Energy.

Average forward on-state current ITAV600 ampere, repetitive peak forward and reverse voltage VDRM/VRRM1400V.
Air and water heat sinks for thyristor cooling are also available to order.

Features of a Fast Switching Thyristor: low switching losses; short turn-off time; fast turn-on and increased di/dt capability. The anode and cathode of the thyristor (polarity) are determined by the symbol on the case.

Thyristors AS ENERGITM have the following features: low static and dynamic losses, high values of VDRM/VRRM, extensive experience of using the devices in various industries, range of voltages from 100 to 9000 V and amperages from 100 to 7500 A, high resistance to thermal and electric cycling, natural or forced air cooling.

Specifications and parameters, datasheet PDF, dimensions, drawings are listed below.

Our company provides a quality guarantee for thyristors of 2 years from the date of purchase. When supplying thyristors, if necessary, we provide technical passport and certificate of conformity.

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The final price for fast switching thyristors depends on the voltage class, quantity, delivery terms, manufacturer, country of origin and form of payment.

General specifications of Fast Switching Thyristor 5STF ABB and Replacements:

Thyristors specifications 5STF06T1408
Maximum allowable average forward current (Case temperature) IT(AV)M (TC) 568 A (70ºC)
Repetitive pulsed closed state voltage; repetitive pulsed reverse voltage VDRM/VRRM 1400 V
Surge on-state current ITSM 11.0 kA
Threshold voltage VT0 2.31 V
On-state slope resistance rT 0.36 mΩ
Turn-off time tq 8 µs
Temperature of p-n junction Tvj max 125 ºC
Thermal resistance, junction to case Rth(j-c) 32.0 K/kW
Thermal resistance, case to heatsink Rth(c-h) 10.0 K/kW
Clamping force Fm ±10% 10 kN
Weight W 0.20 kg
Package (Housing) type T1
Dimensions ØDxØdxH 58.5x34x20 mm
Replacement AS ENERGITM type ATF 600-14-T-08
Datasheet PDF

Part Numbering Guide for Fast Switching Thyristors:

A TF 600 14 T1 08
A brand AS ENERGITM
TF Product group: Fast Switching Thyristor.
600 Average on-state current IT(AV), Amp.
14 Voltage class VRRM / 100.
T1 Housing (package) type.
08 Turn-off time tq:
for devices with tq < 100μs = tq,
for devices with tq > 100μs = tq/10.

Polarity (anode, cathode, gate) of power disc thyristors:

Thyristor polarity Disc thyristors

High Power Semiconductors AS ENERGITM

Our company is engaged in the manufacturer and sale of wide range of power semiconductors (power thyristors, modules, rectifier diodes, avalanche, rotor and welding diodes, triacs etc.) currents up to 15000A and voltages to 9000V, and air and water heatsinks to them.
You can buy semiconductor devices in any volumes, and when ordering large lots, the price will be lower. We have earned the trust of customers and supply products all over the world.

For questions regarding the acquisition of Power Thyristors, Diodes, Modules send an email request to:

[email protected]

And we will provide you a commercial offer for delivery.
For a large number, we will provide an individual price!!!

We are open to manufacture products at our production facilities
according to your requests and technical task.


Photo Gallery

The photo gallery shows many different semiconductor devices, semiconductor chips and SCRs produced by AS ENERGITM, examples of test reports.


Heat sinks for power disc thyristors:

Heat sinks (radiators) are used for single- and double-sided cooling of power semiconductor devices in disc design.

Heat sinks of coolers are made of aluminum radiator profiles and do not require additional protective coating when used in various climatic conditions.

Air and water heat sinks for thyristor cooling are also available to order.

See for more information about heatsinks: "Air-cooled heatsinks O series for disc devices", "Air heatsink SF series", "Water heatsink SS series".


Photo of Fast Switching Thyristors:


icon Why choose AS ENERGITM

  • Own production facilities, including semiconductor silicon chips production
  • European brand - 100% quality, favorable price, short production terms
  • Over 20 years of experience in the semiconductor industry
  • Clients from more than 50 countries trust us
  • 20000 items in the product line for currents from 10A to 15000A, voltages from 100V to 9000V
  • We produce analogues of other manufacturers' products
  • Guaranteed certified quality, warranty period of operation - 2 years

 

Quality Warranty

Our products are certified and correspond to international standards.
Our company provides a quality guarantee for products of 2 years.
We provide certificates of conformity, reliability reports, data sheets and technical passports at the request of the customer.

Certificates

Each product is tested for the main parameters, and Test reports of the parameters for each product are provided.

Test Report

Geography of partnership

AS ENERGITM company manufactures and supplies power semiconductors to more than 50 countries around the world.

Geography

Logistics and Delivery

We deliver our products all over the world with the services of logistics companies: DHL, TNT, UPS, EMS, Fedex, Aramex.
Products can be delivered by any means of transport: air, sea, rail and road.

Logistics

AS ENERGITM Semiconductors Manufacturing

Our products range includes rectifier diodes, phase control thyristors in disc and stud design, avalanche diodes and thyristors, fast switching, high frequency thyristors, fast recovery, welding and rotor diodes, triacs, bridge rectifiers, power modules (thyristor, diode, thyristor-diode, IGBT), and air and water heatsinks to them.

Power diodes and thyristors are produced for currents from 10A to 15000A, voltage range from 100V to 9000V.
Power diode and thyristor modules are produced from 25A and up to 1250A, voltage range 400V - 4400V.
The range of power semiconductors also includes equivalent, replacement, analogue and alternative semiconductor devices of global manufacturers.


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